Diodes ultraminiature DFN1006-3 MOSFETs

Diodes has unveiled a portfolio of MOSFETs in the ultraminiature DFN1006-3 package.

They have a junction to ambient thermal resistance of 256°C/W, and support a power dissipation of up to 1.3 W under continuous conditions.

Both n-channel and p-channel devices are available with breakdown voltage ratings of 20, 30 and 60 for use in a variety of high-reliability load switching, signal switching and boost conversion applications.

The 20 V rated DMN2300UFB4 n-channel MOSFET, for example, displays an Rdson performance of 150 mΩ, helping to reduce conduction losses and power dissipation.

Its p-channel companion, the 20 V rated DMP21D0UFB4 offers a similar performance. Electrostatic discharge ratings of these MOSFETs are also high, at 2 and 3 kV.