International Rectifier has introduced a series of 25 and 30 V N-channel trench HexFET power MOSFETs featuring enhanced switching performance for synchronous buck converter and battery protection in computing applications.
The family uses silicon to deliver on-state resistance (RDS(on)) and improved switching performance.
The devices’ low conduction losses improve full-load efficiency and thermal performance while low switching losses help to achieve high efficiency even at light loads.
Single and dual N-channel MOSFETs are available. Single devices are offered in a PQFN 5 x 6 mm and 3 x 3 mm package optimised for high volume production in addition to D-PAK, I-PAK and SO-8 packages while dual devices are offered in an SO-8 package.
The devices are RoHS compliant and can be offered as halogen free.
Phone: 02 9585 5511
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