Cree GaN HEMT RF transistors

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Cree has introduced a family of GaN HEMT RF transistors that deliver extended bandwidth, high gain and high-efficiency performance to support LTE networks.

Built on plastic dual-flat no-leads (DFN) surface-mount packages, the range includes 28 and 50 V, 15 and 30 W transistors with a range between 700 MHz to 3.8 GHz instantaneous and can be optimised for band splits. Multiband capability creates design flexibility and allows operators to reconfigure the small cell unit for different market requirements.

In high-efficiency applications, the transistors help reduce the size and weight of LTE cellular network transmitters and simplify thermal management. These efficiency gains generate significant energy savings in operational costs.