Cree RF GaN HEMT transistors
Cree RF has released GaN HEMT transistors for frequency-agile, software defined radios, 3G/4G telecom BTS, C-OFDM data-links and satcom applications.
The devices are suitable for many communications applications especially those seeking to improve bandwidth, efficiency and frequency of operation, or for transmitters challenged to reduce size and weight.
The family of products includes 6 to 120 W, unmatched, packaged discrete devices suitable from DC-2 GHz, 1.8-2.3 GHz, 3.3-3.8 GHz, and 4.9-5.8 GHz. The portfolio also includes high-power internally matched devices at 120 and 240 W levels operating at 1.8-2.3 and 2.5-2.7 GHz.
Phone: 02 9482 1944
u-blox NORA-W4 Wi-Fi 6 module
The u-blox NORA-W4 Wi-Fi 6 module is suitable for IoT applications such as smart home, asset...
STMicroelectronics TSZ151 operational amplifiers
The STMicroelectronics TSZ151 operational amplifiers are designed to lend stability to circuits...
Neousys NRU-154PoE-FT Edge AI computer
The Neousys NRU-154PoE-FT Edge AI computer delivers up to 100 TOPS AI inference performance,...