International Rectifier AUIRS2191S/AUIRGP50B60PD1 motor vehicle drivers

International Rectifier has introduced the AUIRS2191S 600 V driver IC and AUIRGP50B60PD1 600 V non-punch-through insulated gate bipolar transistor for use in DC-DC motor vehicle applications.

The devices feature fast switching speed and high power density, making them suitable for use in high-frequency DC-DC applications including high-power DC-DC SMPS converters used in electric and hybrid electric vehicles.

The S2191S dual channel IC enables independent control of the high and low side in a half-bridge topology. The device provides up to +3.5/-3.5 A (source/sink) current capability with very fast propagation delay times of 90 ns (typical) making the switches highly responsive to driver command.

The IC also has independent control of the high and low side to allow customisation of dead time to minimise power loss and matched propagation delay on both channels.

Operating junction temperature up to 150°C and undervoltage lockout for both channels are also offered, in addition to the VSS logic ground offset pin separated from COM power ground pin to provide higher immunity to transient shifts on COM voltage.

The device features high-voltage integrated circuit and latch-immune CMOS to offer ruggedised monolithic construction. The output drivers have a high pulse current buffer stage designed for minimum driver cross conduction.

The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration, operating up to 600 V. In addition, the devices feature benchmark negative voltage spike immunity for operation even under extreme switching conditions and short circuits.

The IR50B60PD1 device is co-packaged with a 25 A ultra-fast soft-recovery diode capable of operating at switching speeds up to 150 kHz, making it a suitable substitute for MOSFETs in high-power SMPS applications.

The motor vehicle-qualified IGBT uses IR’s thin-wafer technology, to ensure shorter minority carrier depletion time and faster turn-off.

The IC’s negligible turn-off tail current and low turn-off switching loss, enable designers to achieve higher operating frequencies. The improvements in switching performance, combined with optimised (positive) thermal coefficient characteristics and the lower gate turn-on charge, enable higher current density.