International Rectifier PQFN power MOSFET family

International Rectifier has introduced a family of 25 and 30 V devices featuring HEXFET MOSFET silicon in a new performance PQFN 3 x 3 package that delivers high density for DC-DC converters in telecom, netcom and high-end desktop and notebook computers.

The package enables up to 60% higher load-current capability than standard PQFN 3 x 3 devices in a compact footprint while overall package resistance is reduced to deliver low on-state resistance.

In addition to the low RDS(on), the performance PQFN package offers enhanced thermal conductivity as well as improved reliability and is qualified to industrial standard and moisture sensitivity level 1 (MSL1).

The performance package is also applied to 5 x 6 mm footprint devices, enabling designs requiring more current without the need for additional footprint compared with standard PQFN 5 x 6 devices.

The family includes devices optimised for use as control MOSFETs featuring low gate resistance (Rg) to reduce switching losses. For synchronous MOSFET use, devices are available as a FETKY (monolithic FET and Schottky diode) configuration to offer enhanced efficiency and EMI performance by reducing reverse recovery time.