STMicroelectronics MDmesh DK5 power MOSFETs with fast-recovery diode

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The latest MDmesh DK5 power MOSFETs, from STMicroelectronics, are very high voltage (VHV) super-junction transistors with the extra advantage of a fast-recovery diode. This helps designers maximise the efficiency of various power-conversion topologies including LLC resonant converters with zero-voltage switching (ZVS).

The super-junction MOSFETs, in voltage ratings from 950 to 1050 V, deliver high switching performance with lower on-resistance (R_DS(ON)) and higher current rating per die area compared to ordinary planar MOSFETs, according to the company. They enable designers to enhance efficiency, as well as increase power density by using fewer parallel components, in converters for high-power equipment such as telecom and data-centre servers powered from high bus voltages, industrial welders, plasma generators, high-frequency induction heaters and X-ray machines.

With the fast-recovery body diode, the devices enable high efficiency in ZVS LLC resonant converters, which are chosen for applications that require high efficiency over a wide input-voltage range. Other types of bridged converters, as well as boost DC/DC converters for battery charging, benefit from the reduced losses and enhanced dynamic performance of the devices. Compared with currently available VHV fast-diode MOSFETs, the DK5 devices are said to combine the best reverse-recovery time (trr) and lowest MOSFET gate charge (Qg) and R_DS(ON) with the favourable output and input capacitances (C_oss, C_iss) of a super-junction device.

For more information: www.st.com/mdmeshdk5.