STMicroelectronics MDmesh DM6 600 V MOSFETs

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STMicroelectronics’ MDmesh DM6 600 V MOSFETs contain a fast-recovery body diode to bring the performance advantages of the company’s super-junction technology to full- and half-bridge topologies, zero-voltage switching (ZVS) phase-shift converters, and applications and topologies that need a robust diode to handle dynamic dV/dt.

Leveraging ST’s carrier-lifetime control technology, the MOSFETs have reduced reverse-recovery time (trr) to minimise power dissipation in the diode when turning off after freewheeling, with optimised recovery softness. Low gate charge (Qg) and on-resistance (R_DS(ON)), together with a capacitance profile tailored for light loads, allows high operating frequencies and good efficiency, with simplified thermal management and reduced EMI.

Suitable for equipment such as charging stations for electric vehicles, telecom or data-centre power converters, and solar inverters, the devices enable high energy ratings with robust performance and good power density.

The range comprises 23 part numbers covering current ratings from 15 to 72 A, with gate charge (Qg) ranging from 20 to 117 nC and R_DS(ON) from 0.240 down to 0.036Ω respectively. The choice of power package options includes the low-inductance leadless TO-LL, PowerFLAT 8x8 HV, D2PAK, TO-220 and TO-247 with short leads, long leads or Kelvin pin for applications requiring precision current sensing.

For more information: www.st.com/stpower.