STMicroelectronics MDmesh K5 900 V MOSFETs

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Power-supply designers can satisfy system demands for higher power and greater efficiency using MDmesh K5 super-junction MOSFETs from STMicroelectronics. A 900 V breakdown voltage assures extra safety margin in systems with high bus voltages.

The products are claimed to be the first 900 V MOSFETs with R_DS(ON) below 100 mΩ, providing the industry’s best R_DS(ON) among DPAK devices. With low gate charge (Qg), they ensure fast switching for flexibility where a wide input-voltage range is required.

These characteristics ensure high efficiency in all types of flyback converters, including standard, quasi-resonant and active-clamp designs covering power ratings from 35–230 W or higher. Low input and output capacitances (Ciss, Coss) enable zero-voltage switching with minimal energy loss in half-bridge LLC resonant converters.

The increased safety margin and good static and dynamic behaviour of the devices enable designers to improve the performance of a wide variety of products such as server power supplies, three-phase switched-mode power supplies (SMPS), LED lighting supplies, electric-vehicle (EV) chargers, solar generators, welders, industrial drives and factory automation.

For more information: www.st.com/mdmeshk5.