STMicroelectronics STGAP2S galvanic isolated gate driver

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With 26 V maximum gate-drive output voltage and optional separate turn-on/turn-off outputs or integrated active Miller clamp, STMicroelectronics’ STGAP2S single-channel galvanic isolated gate driver can control silicon-carbide (SiC) or silicon MOSFETs and IGBTs across a range of switching topologies.

The STGAP2SCM has a dedicated active Miller clamp pin that provides a convenient solution to prevent unwanted transistor turn-on in half-bridge configurations. Connecting the MOSFET gate to this pin clamps the voltage to isolated ground at turn-off, until the next genuine turn-on signal. The STGAP2SM with separate turn-on and turn-off outputs meanwhile helps optimise switching transitions using two external gate resistors.

The gate drivers have 4 A rail-to-rail outputs for crisp, efficient switching, even with high-power inverters. Input-to-output propagation delay is within 80 ns for precise PWM control at the high switching frequencies suited to SiC devices. High dV/dt common-mode transient immunity prevents energy-sapping spurious switching.

With 1700 V galvanic isolation also built in, the devices can simplify the bill of materials for consumer or industrial motor drives, 600 or 1200 V inverters, DC/DC converters, battery chargers, welders, induction heaters, uninterruptible power supplies and power-factor correction (PFC) controllers.

Extensive integrated protection features include undervoltage lockout (UVLO) to protect the power switch if the supply voltage falls too low. In addition, overtemperature protection is provided, as well as hardware interlocking to prevent high-side/low-side cross conduction in half-bridge circuits. There is also a standby mode, which keeps the output in a safe state while saving power.

For more information: www.st.com/stgap.