30 V Power MOSFET

International Rectifier's IRLR7833 and IRLR7821 HEXFET power MOSFETs are designed using stripe-trench technology enabling a low on-resistance, or RDS(on), 30 V MOSFET in a D-Pak.

This technology enables the devices to offer up to 2.5% increase in efficiency or alternatively up to 25% reduction in part count compared with other MOSFETs in DC-DC converters.

The two MOSFETs are designed for synchronous buck converter circuits in servers, desktops, notebooks, and point-of-load converters in networking and communications equipment. The IRLR7833 can also be used for secodary side synchronour rectification for isolated converters.

The IRLR7833 offers a 50% reduction in RDS(on) and the IRLR7821 exhibits more than 30% reduction in gate charge when compared with previous generation devices. With very low RDS(on), the IRLR7833 is suitable for synchronous MOSFET applications.

The IRLR7821 has low gate charge, making it a suitable control MOSFET. The devices have a 20 V gate rating.

In desktop and VRM designs, and even notebook applications with up to 20 A per phase requirement, the D-Pak package is used in the synchronous FET socket.