90 nm SDRAM

Samsung Electronics has announced what it claims is the industry's first mass production of 90 nm 512 Mb DDR SDRAM on 300 mm base wafers.

The device with voltage rates of 2.5 is available at both 400 and 333 MHz. The device is already being verified by chipset companies.

The migration from 0.10 micron to 90 nm boosts production by 40% and offers higher production efficiencies.

The keys to successful production in 90 nm process technology are: short wavelength argon fluoride (ArF) light source that produces the finer circuitry, high dielectric alumina hafnium oxide (AHO) applied within the capacitor to enhance data storage characteristics and three-dimensional transistor circuitry, recessed channel array transistor, implemented to reinforce the capacitors' data retaining features enhancing the refresh cycles.