Alliance Memory AS4C1G8MD3L CMOS DDR3L SDRAM memory device

The Alliance Memory monolithic high-speed, low-voltage AS4C1G8MD3L CMOS DDR3L SDRAM memory device has an 8 Gb density in the 78-ball, 9 x 13.2 mm lead-free FBGA package.

The product offers double data rate architecture for transfer rates of up to 1600 Mbps/pin and clock rates of 800 MHz.

The product provides higher bandwidth for newer-generation microprocessors in industrial, medical, networking, telecom and aerospace applications. It operates from a single +1.35 V power supply and is backwards-compatible with +1.5 V power supplies to enable large memory subsystems.

The product is available with an extended commercial temperature range of 0 to +95°C (AS4C1G8MD3L-12BCN). Internally configured as eight banks of 1 G x 8 bits, the product features a fast 64 ms, 8192-cycle refresh from 0 to +85°C and 32 ms from +85 to +95°C.

The device offers fully synchronous operation and provides programmable read or write burst lengths of 4 or 8. An auto precharge function provides a self-timed row precharge initiated at the end of the burst sequence. Easy-to-use refresh functions include auto- or self-refresh, and a programmable mode register allows the system to choose the most suitable modes to maximise performance.