Alliance Memory synchronous DRAMs with 128 and 256 MB densities

Alliance Memory has extended its 128M and 256M lines of high-speed CMOS synchronous DRAMs (SDRAM) with new devices in a 54-ball, 8 x 8 x 1.2 mm TFBGA package. The 8M x 16 and 16M x 16 SDRAMs feature fast access time from clock down to 4.5 ns at a 5-ns clock and clock rates of 143 MHz.

The devices are optimised for medical, industrial, automotive and telecom applications, in addition to high-performance PC applications requiring high memory bandwidth.

The AS4C8M16S-7BCN and AS4C16M16S-7BCN provide programmable read or write burst lengths of 1, 2, 4, 8 or full page, with a burst termination option. An auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence.

The AS4C8M16S-7BCN and AS4C16M16S-7BCN are the latest in the company's full line of high-speed SDRAMs, which includes devices with densities of 16, 64, 128, 256 and 512 MB in the 54-pin TSOP II, 54-ball TFBGA, 86-pin TSOP II and 90-ball BGA packages.