Bipolar Power Transistor

STMicroelectronics has introduced the first in a family of high-gain bipolar power transistors that feature low saturation voltage, making it suitable for low-voltage switching applications.

Typical uses for the STT818A/B include power management in portable equipment and switching regulators in battery chargers.

The STT818A/B high-gain PNP power transistor, using an inter-digitated layout, harnesses the latest low-voltage epitaxial planar technology.

As a result, the bipolar transistor exhibits a typical collector-emitter saturation voltage of 0.25 (for IC = 2 A and IB = 20 mA), capping conduction losses.

With a minimum DC current gain (hFE) of 100 and a typical value of 200, the STT818A minimises current requirements. The STT818A also carries a continuous collector current (Ic) of 3 A.