International Rectifier’s 1200 V ultra-fast insulated-gate bipolar transistors (IGBTs) are optimised for industrial motor drive and UPS systems. The devices leverage IR’s field stop trench ultra-thin wafer technology that delivers lower conduction and switching losses.
Co-packaged with a soft recovery low Qrr diode and featuring a 10 µs minimum short circuit time rating, the devices are optimised for rugged industrial applications.
The packaged devices cover a broad current range from 10 - 50 A. Other key performance benefits include Tjmax of 150°C, positive VCE(on) temperature coefficient for easy paralleling and low VCE(on) to reduce power dissipation and achieve higher power density. Die products are also available.
Phone: 02 9585 5511
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