International Rectifier IRGPS4067DPbF/IRGP4066DPbF insulated gate bipolar transistors

Thursday, 12 January, 2012 | Supplied by: Avnet Electronics Marketing


International Rectifier has expanded its portfolio of rugged, ultra-fast 600 V trench insulated gate bipolar transistors (IGBTs) with the introduction of the IRGPS4067DPbF and IRGP4066DPbF devices for uninterruptible power supplies, solar, industrial motor and welding applications.

The devices use trench thin wafer technology to offer lower conduction and switching losses. Co-packaged with a soft recovery low Qrr diode, they are optimised for ultra-fast switching (8-30 kHz) with 5 µs short circuit rating and feature low Vce(on) and positive Vce(on) temperature coefficient for easy paralleling.

Other key features include maximum junction temperature of 175°C and low EMI.

Online: www.em.avnetasia.com
Phone: 02 9585 5511
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