International Rectifier IRLHS6276 power MOSFETs
International Rectifier has enhanced its PQFN offering with the introduction of a PQFN 2 x 2 mm and PQFN 3.3 x 3.3 mm package that integrate two HEXFET MOSFETs, using the latest silicon technology, to deliver a high density solution for low power applications.
Featuring a pair of power MOSFETs in each package, devices offer the flexibility of either common drain or half-bridge topologies. The IRLHS6276, features two MOSFETS each with a typical on-state resistance (RDS(on)) of 33 mΩ in a 4 mm² area.
The dual PQFN family includes P-channel devices optimised for use in the high-side of load switches, providing a simpler drive solution.
Phone: 02 9585 5511
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