International Rectifier's IRF1312 HEXFET power MOSFET is rated at 80 V and can be used as both a primary- and a secondary-side MOSFET in an isolated DC-DC converter for netcom and datacom systems.
As a primary-side MOSFET, it can be used for a maximum input voltage of 60, and therefore is best in either a half- or full-bridge configuration for 36 to 60 and 48 V regulated input bus isolated DC-DC converter applications.
The 80 V rating offers an additional 6% guard-band over competing 75 V MOSFETs for more rugged designs.
When used as a secondary-side MOSFET, it offers a 0.4% improvement in efficiency compared with standard 75 V MOSFETs when used in 12 V applications. The MOSFET can be used in secondary side circuits with 15 V maximum output.
It features low gate charge to reduce switching losses and low on-state resistance to minimise conduction losses.
It is available in TO-220AB, D2Pak and TO-262 packages.
Phone: 03 9724 0792
STMicroelectronics ACEPACK DMT-32 silicon carbide power modules
The ACEPACK DMT-32 silicon carbide power modules from STMicroelectronics combine the features of...
BeagleBoard BeagleV-Fire SBC
The BeagleBoard BeagleV-Fire SBC is suitable for a range of applications, including Internet of...
ICP DAS DL-110S-E-W remote data logger module
The DL-110S-E-W remote data logger module from ICP Electronics is designed to measure and record...
