Microsemi has announced a family of high-speed power MOS8 insulated gate bipolar transistors featuring punch-through technology in 600 and 900 V devices.
The target applications include solar inverters, high-performance SMPS and industrial equipment such as welders, battery chargers and induction heaters.
The series has low conduction losses (VCE(on), typ = 2.0 V (600 V) and 2.5 V (900 V), to increase overall circuit efficiency. Low switching losses enable operation at frequencies over 100 kHz.
The IGBTs are available as single devices or packaged with DQ series fast, soft recovery diodes.
Phone: 02 8883 4670
London Electronics Fusion digital displays
The Fusion series of digital displays are designed to deliver real-time, precision measurements...
Metromatics XMC-FZU7EV XMC FPGA configurable module
The XMC-FZU7EV configurable module from Metromatics is designed for mission-critical applications...
RuggON SOL 7 rugged tablet
The RuggON SOL 7 rugged tablet is powered by Intel Core Ultra processors with Intel AI Boost,...