Microsemi has announced a family of high-speed power MOS8 insulated gate bipolar transistors featuring punch-through technology in 600 and 900 V devices.
The target applications include solar inverters, high-performance SMPS and industrial equipment such as welders, battery chargers and induction heaters.
The series has low conduction losses (VCE(on), typ = 2.0 V (600 V) and 2.5 V (900 V), to increase overall circuit efficiency. Low switching losses enable operation at frequencies over 100 kHz.
The IGBTs are available as single devices or packaged with DQ series fast, soft recovery diodes.
Phone: 02 8883 4670
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