Qorvo QPA3069 power amplifier

Engineered for defence and aerospace applications, the 100 W QPA3069 power amplifier from Qorvo provides high power density and power-added efficiency for 2.7–3.5 GHz radiofrequency (RF) based designs. Fabricated with Qorvo’s 0.25 µm gallium nitride-on-silicon carbide (GaN-on-SiC) production process, the high-power, S-band amplifier is designed to simplify system integration and offers high performance in a 7 x 7 x 0.85 mm package.

The power amplifier features greater than 58 dBm of saturated output power and over 25 dB of large-signal gain. The device’s power-added efficiency (PAE) is rated at 53%, and the RF output power where the device starts to draw positive gate current (PSAT) is measured at 50 dBm. The amplifier features input return loss as low as 13 dB and output return loss as low as 7 dB. To simplify system integration, the product also features two RF ports that are fully matched to 50 Ω, each integrated with DC blocking capacitors.

The device has an operating temperature of -40 to 85°C and a power dissipation of 117 W at the top of the temperature range. The lead-free, RoHS-compliant amplifier is suitable for S-band radar applications.