Qorvo QPD1025L GaN-on-SiC transistor

The QPD1025L gallium nitride (GaN) on silicon carbide (SiC) transistor, from Qorvo, operates with 1.8 kW at 65 V. It is claimed to be the industry’s highest-power GaN-on-SiC radiofrequency transistor, delivering the high signal integrity and extended reach essential for L-band avionics and identification friend or foe (IFF) applications.

The high performance of GaN technology makes it suitable for infrastructure, defence and aerospace applications such as radar, communications, navigation and more. The increased performance capabilities offer designers the flexibility to reduce board space and system costs while improving system performance.

The Qorvo QPD1025L is a high-electron-mobility transistor (HEMT) that supports both pulsed and continuous wave (CW) operations to more efficiently offer performance comparable to silicon-based LDMOS devices. Powered from a 65 V rail, the device offers 22.5 dB linear gain and a typical power-added efficiency (PAE_3dB) of 77.2%.

The lead-free, RoHS-compliant transistor features internal input prematch, which simplifies external board match and saves board space. It is supported by the QPD1025L evaluation board.