Qorvo UF4C and UF4SC SiC field-effect transistors

Qorvo has released the UF4C and UF4SC 1200 V silicon carbide field-effect transistors (FETs), a fourth-generation family of devices offering leading figures of merit in on-resistance. This makes the series suitable for power solutions in mainstream 800 V bus architectures in applications such as onboard chargers for EVs, industrial battery chargers, industrial power supplies, DC-DC solar inverters and more.

The FETs provide designers with multiple on-resistance and package options. They are offered in versions with on-resistance (R_DS(on)) values of 23 to 70 mΩ and either a three-lead TO-247-3L package or a four-lead TO-247-4L package. The TO-247-4L package incorporates a Kelvin gate to deliver ultralow gate charge and good reverse recovery characteristics, enabling designers to switch inductive loads and any application requiring a standard gate drive.

All the devices in the range can be safely driven with standard 0 to 12 or 15 V gate drive voltage, creating a suitable replacement for silicon IGBTs, FETs or super-junction devices without changing the gate drive voltage. Other notable features include an impressive threshold noise margin, preserved with a true 5 V threshold voltage, and a built-in ESD gate protection clamp.