Radiation-hardened, logic-level MOSFETs
International Rectifier has introduced radiation-hardened (RAD-Hard) logic-level gate drive MOSFETs designed to boost efficiency and performance in circuits that traditionally relied on bipolar transistors.
The general purpose, low power switching devices are made for harsh environments.
Compared with 2N2222A and 2N2907A bipolar transistors, IR's RAD-Hard MOSFETs require less energy, switch faster and feature a lower on-state resistance. Packaged in a UB (3LCC) surface mount or through-hole package, they are a compact, lightweight, hermetic alternative to bipolar devices.
The MOSFETs offer superior switching performance over their bipolar equivalents and are easier to drive. They improve gain and are suitable replacements for bipolar transistors in circuits requiring high tolerance to radiation.
Phone: 03 9808 2094
ADLINK cExpress-ASL COM express module
The ADLINK cExpress-ASL COM express module is integrated with Intel UHD graphics with up to 32...
HYDAC EDS 3300 pressure switch
The HYDAC EDS 3300 pressure switch features an integrated digital display for relative pressure...
Sensirion SFC6000D mass flow controller
The Sensirion SFC6000D mass flow controller is designed to be small and light, thereby allowing...