Radiation-hardened, logic-level MOSFETs

International Rectifier has introduced radiation-hardened (RAD-Hard) logic-level gate drive MOSFETs designed to boost efficiency and performance in circuits that traditionally relied on bipolar transistors.

The general purpose, low power switching devices are made for harsh environments.

Compared with 2N2222A and 2N2907A bipolar transistors, IR's RAD-Hard MOSFETs require less energy, switch faster and feature a lower on-state resistance. Packaged in a UB (3LCC) surface mount or through-hole package, they are a compact, lightweight, hermetic alternative to bipolar devices.

The MOSFETs offer superior switching performance over their bipolar equivalents and are easier to drive. They improve gain and are suitable replacements for bipolar transistors in circuits requiring high tolerance to radiation.