Toshiba MG600Q2YMS3 and MG400V2YMS3 silicon carbide MOSFET modules
Toshiba Electronic Devices & Storage has launched two silicon carbide (SiC) MOSFET dual modules: the MG600Q2YMS3, with a voltage rating of 1200 V and drain current rating of 600 A; and the MG400V2YMS3, with a voltage rating of 1700 V and drain current rating of 400 A.
The modules have mounting compatibility with widely used silicon (Si) IGBT modules. Their low energy loss characteristics meet needs for high efficiency and size reductions in industrial equipment, such as converters and inverters for railway vehicles, and renewable energy power generation systems.
Phone: 02 9887 6000
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