Toshiba TK042N65Z5, TK095N65Z5 power MOSFETs

Toshiba Electronic Devices & Storage Corporation has added the TK042N65Z5 and TK095N65Z5 650V N-channel power MOSFETs to its DTMOSVI series with a super junction structure.

The new products use high-speed diodes to enhance the reverse recovery characteristics required for bridge circuit and inverter circuit applications. The DTMOSVI (HSD) process used in the new products has a low drain cut-off current at high temperatures. This helps to reduce equipment power loss and improve efficiency.

Toshiba also offers tools that support circuit design for switching power supplies. Alongside the G0 SPICE model, which verifies circuit function in a short time, G2 SPICE models that reproduce transient characteristics are also available.

Toshiba plans to expand the DTMOSVI line-up with the release of devices in TO-220 and TO-220SIS through-hole packages, and TOLL and DFN 8×8 surface-mount packages.

The company also will continue to expand its line-up of the DTMOSVI series beyond the already released 650 and 600 V products and the new products with high-speed diodes. This will enhance switching power supply efficiency, contributing to energy-saving equipment.