Toshiba TK055U60Z1 N-Channel power MOSFET

Toshiba has expanded its line-up of N-channel power MOSFETs with a 600 V super junction structure suitable for data centres, switching power supplies and power conditioners for photovoltaic generators. The TK055U60Z1 is the first 600 V product in the DTMOSVI series.

By enhancing the gate design and process, the 600 V DTMOSVI series products reduce drain-source on-resistance per unit area by approximately 13% and drain-source on-resistance × gate-drain charge, the figure of merit for MOSFET performance, by approximately 52%, compared to Toshiba’s current generation DTMOSIV-H series products with the same drain-source voltage rating. This enables the series to achieve low conduction loss and low switching loss, and helps to improve efficiency of the switching power supplies.

The power MOSFET is housed in a TOLL package that allows Kelvin connection of its signal source terminal for the gate drive. The influence of inductance in the source wire in the package can be reduced to accentuate the high-speed switching performance of the MOSFET, which suppresses oscillation during switching.