Vishay Intertechnology trench PT and FS IGBT platform

Vishay Intertechnology has introduced its trench IGBT (insulated-gate bipolar transistor) platform featuring punch-through (PT) and field-stop (FS) technologies.

Designed to increase efficiency in motor drives, UPSs, solar inverters and welding machine inverters, the semiconductor devices, provided as bare die, offer low collector-to-emitter voltages and fast and soft turn-on and turn-off for low conduction and switching losses while providing breakdown voltages to 650 V. Available in various die sizes with collector current ratings from 30 to 240 A and breakdown voltages of 600 and 650 V, the IGBT chips include trench PT and FS devices, each available as sawn or unsawn die.

Offering low conduction losses, the trench PT devices feature a negative temperature coefficient for low collector-to-emitter voltages down to 1.07 V at 50% rated current and 1.34 V at full rated current and 125°C. The IGBTs are said to offer a smaller size than planar devices, providing high current density and low thermal resistance. They are optimised for low switching frequencies to 1 kHz.