Vishay has expanded its Micro Foot TrenchFET Gen III power MOSFET family with two p-channel 30 V devices.
The Si8497DB is said to be the first 30 V chipscale MOSFET in the compact 1 x 1.5 mm size, making it the smallest available, while the Si8487DB is said to provide the lowest on-resistance available for a 30 V chipscale device in the 1.6 x 1.6 mm form factor.
The TrenchFET Gen III p-channel technology packs one billion transistor cells into each square inch of silicon.
This allows a superfine, submicron pitch process that cuts the best on-resistance for a p-channel MOSFET by up to half.
Micro Foot allows the use of a larger die for a given outline, which means a lower on-resistance for a given device area.
The devices will be used for load, battery and charger switching in handheld devices including smartphones, tablets, point-of-sale devices and mobile computing.
The devices are halogen free in accordance with the IEC 61249-2-21 definition and compliant to RoHS Directive 2002/95/EC. The Si8487DB is pin compatible with the company’s 30 V Si8409DB.
Phone: 02 9550 6600
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