Wolfspeed C3M silicon carbide power MOSFETs

Wolfspeed has released a range of 1200 V SiC power MOSFETs, based on third-generation planar MOSFET technology.

The C3M0016120D, C3M0021120D and C3M0032120D devices include a rugged intrinsic body diode that allows for third-quadrant operation without the need for an additional external diode. According to Wolfspeed, the product family includes the lowest R_ds(on) at 1200 V in a discrete package with a flat R_ds(on) overtemperature.

The third-generation MOSFETs have been designed with an increased CGS/CGD ratio for better hard-switching performance. Soft-switching applications can also benefit from the more linear COSS behaviour. Designers can reduce component count by moving from silicon-based, three-level topologies to simpler two-level topologies made possible by the improved switching performance.

The devices are suitable for a range of applications, including solar energy systems, EV charging, uninterruptible power supply (UPS), SMPS, motor control and drives, and energy storage.