Advanced GaN technology revolutionises power switching

Supplied by Mouser Electronics on Monday, 07 August, 2017


Viable power-switching devices based on gallium nitride (GaN) technology have turned the corner — and there’s no going back. They offer greater efficiency and power-handling performance compared to their well-established, widely available silicon MOSFET counterparts.

Learn how to use GaN technology to successfully optimise your power device.


Related White Papers

Investigation into isolated failure mechanisms

Considerable efforts have been made to predict the operational lifetime of classical IGBT...

Comparing the incomparable: understanding and comparing IGBT module datasheets

This white paper explains the component parameters of IGBT modules, points out possible...

The SiC revolution — reliable, efficient and cost-effective

Discover how to deliver the high efficiency and...


  • All content Copyright © 2026 Westwick-Farrow Pty Ltd