Advanced GaN technology revolutionises power switching
Supplied by Mouser Electronics on Monday, 07 August, 2017
Viable power-switching devices based on gallium nitride (GaN) technology have turned the corner — and there’s no going back. They offer greater efficiency and power-handling performance compared to their well-established, widely available silicon MOSFET counterparts.
Learn how to use GaN technology to successfully optimise your power device.
Digital printing for electronic enclosures & front panels
Learn about digital printing for electronic...
Semiconductor protection tips for 3-level topologies
This application note describes the control and protection of power semiconductors in 3-level NPC...
How to solve SWaP-C challenges with 270 V input applications
Defence applications with 270 VDC input must meet stringent EMI, environmental and power-related...

