Advanced GaN technology revolutionises power switching
Supplied by Mouser Electronics on Monday, 07 August, 2017
Viable power-switching devices based on gallium nitride (GaN) technology have turned the corner — and there’s no going back. They offer greater efficiency and power-handling performance compared to their well-established, widely available silicon MOSFET counterparts.
Learn how to use GaN technology to successfully optimise your power device.
Investigation into isolated failure mechanisms
Considerable efforts have been made to predict the operational lifetime of classical IGBT...
Will self-driving cars guarantee your safety?
Smart cars continue to expand autonomous driving tasks that assist or even outright...
Test engineering insights from aerospace and defence
You are evaluated on your ability to manage cost and risk, whether you’re working on your next...

