Advanced GaN technology revolutionises power switching
Supplied by Mouser Electronics on Monday, 07 August, 2017
Viable power-switching devices based on gallium nitride (GaN) technology have turned the corner — and there’s no going back. They offer greater efficiency and power-handling performance compared to their well-established, widely available silicon MOSFET counterparts.
Learn how to use GaN technology to successfully optimise your power device.
Related White Papers
High-density, modular PDNs optimise mobile robot performance
High-density, modular PDNs optimise mobile robot...
How to design military-grade, rapid-start power applications
Learn about the critical areas of consideration when designing an isolated power system...
Will self-driving cars guarantee your safety?
Smart cars continue to expand autonomous driving tasks that assist or even outright...
