New scanner produces wafers
Imec has printed first extreme-ultraviolet (EUV)-light wafers with the ASML NXE:3100 preproduction scanner using XTREME technologies (a wholly owned subsidiary of Ushio Inc) laser assisted discharge plasma (LDP) source.
The mechanical installation and set-up of the device started 1 March 2011 and site acceptance tests were completed within the scheduled time frame. The scanner is interfaced with a TEL Lithius Pro EUV process track and is believed to be the only preproduction tool in the world equipped with an LDP source from XTREME technologies.
It leads to much higher wafer throughput. The source power is expected to scale to 100 W by early 2012, increasing the scanner throughput from the current level to 60 silicon wafers (300 mm) an hour.
The exposure rate is already 20 times faster than an earlier device. A first test of dedicated chuck overlay showed the potential to achieve the <4 nm target.
The scanner integrates four image and four dose control sensors which were developed within imec’s CMORE development and prototyping service. Installation of the sensors combined with new wafer tables made both chucks equivalent for overlay, enabling full twinstage-type operation. At the same time, off-axis illumination options have been installed, which at factory acceptance have resolved sub-20 nm features using dipole illumination.
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