IME and ST collaborate on silicon carbide R&D

STMicroelectronics Pty Ltd

Thursday, 02 December, 2021

IME and ST collaborate on silicon carbide R&D

Semiconductor company STMicroelectronics has announced a research and development (R&D) collaboration with the Institute of Microelectronics (IME), based at Singapore’s Agency for Science, Technology and Research (A*STAR), in the field of silicon carbide (SiC) for power-electronics applications in the automotive and industrial markets. The collaboration sets a foundation for a comprehensive SiC ecosystem in Singapore and creates opportunities for other companies to engage with IME and ST in SiC research.

Power electronics involves the control and conversion of electricity using electronic devices. While silicon-based devices are predominantly used in today’s power electronics, next-generation power electronics are expected to be based on wide-bandgap materials like SiC owing to its better characteristics for power conversion.

SiC solutions can outperform conventional silicon (Si) devices in power electronics for electric vehicles (EVs) and industrial applications to meet the need for power modules with smaller form factors or higher power outputs, as well as higher temperature operation. A*STAR’s IME and ST aim to develop and optimise SiC integrated devices and package modules to offer significantly better performance in next-generation power electronics.

“We are pleased to collaborate with STMicroelectronics to develop breakthrough technologies that meet the needs of the growing electric vehicles market,” said Prof Dim-Lee Kwong, Executive Director of IME. “Such efforts will continue to anchor high-value R&D activities in Singapore and bolster its reputation as an attractive regional hub for research, innovation and enterprise.”

“This new collaboration with IME encourages the growth of a silicon carbide ecosystem in Singapore, as we ramp up our manufacturing activities there in addition to Catania (Italy),” added Edoardo Merli, Power Transistor Macro-Division General Manager and Group Vice President of STMicroelectronics’ Automotive and Discrete Group. “The multiyear collaborative effort helps us scale up our global R&D effort across our existing programs managed out of Catania and Norrköping (Sweden), covering the entire SiC value chain.

“IME’s strong knowledge and expertise in wide bandgap materials, and notably SiC, supports us in accelerating the development of new technologies and products addressing the challenges of sustainable mobility and better energy efficiency in a wide spectrum of applications.”

Image credit: ©stock.adobe.com/au/Buffaloboy

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