Nexperia SiGe rectifiers

Nexperia’s silicon–germanium (SiGe) rectifiers are said to offer engineers cutting-edge efficiency, thermal stability and space savings when designing products. The rectifiers are available with 120, 150 and 200 V reverse voltages that combine the high efficiency of their Schottky diode counterparts with the thermal stability of fast recovery diodes.

Designing in Nexperia’s innovative SiGe technology provides engineers with options to develop state-of-the-art power circuitry. Targeting automotive, communications infrastructure and server markets, the 1–3 A SiGe rectifiers are of particular benefit in high ambient temperature applications such as LED lighting, engine control units or fuel injection systems. The rectifiers are AEC-Q101 compliant.

Design engineers using the low-leakage devices can experience an extended safe operating area with no thermal runaway up to 175°C. At the same time, they can optimise their design for high efficiency, which is not feasible using fast recovery diodes commonly used in such high-temperature designs. With low forward voltage (Vf) and low Qrr, the SiGe rectifiers have an advantage of 10–20% lower conduction losses, the company claims.