Vishay next-generation D high-voltage power MOSFETs

Vishay has released the first devices in its next-generation D series of high-voltage power MOSFETs.

The 400, 500 and 600 V n-channel devices combine low specific on-resistance with ultralow gate charge and currents from 3 to 36 A in a wide range of packages.

The devices’ stripe design - with a smaller die size and terminations - lowers the total gate charge by 50% while increasing switching speed and reducing on-resistance and input capacitance.

The devices feature on-resistance down to 0.17, 0.13 and 0.34 Ω.

The ultralow on-resistance values translate into low conduction and switching losses to save energy in high-power, high-performance switchmode applications. These include server and telecom power systems, welding, plasma cutting, battery chargers, ballast light, high-intensity discharge (HID) lighting, semiconductor capital equipment and induction heating.