The Atlas Component Analyser identifies bipolar and Darlington transistors, enhancement and depletion mode MOSFETs, JFETs, triacs, thyristors, LEDs, bicolour LEDs, diodes and diode networks.
Connecting a device to the analyser will display the results on a scrollable, multi-page display.
A BC338 transistor connected to the instrument will show it as an NPN bipolar transistor, revealing which of the red, green and blue test leads are connected to base, emitter and collector. It will also display the hFE current gain (220), the collector test current used to obtain hFE, the Vbe base to emitter voltage (0.7), the base test current and the collector leakage current (if any).
The analyser identifies the anode and cathode of diodes and LEDs; displays Vf forward voltage and If forward current.
In the case of a two-diode package, the Atlas will display whether the two diodes are connected in series or parallel plus the anode and cathode pinouts in turn for each diode.
With bipolar transistors it identifies base, collector and emitter pins; displays current gain hFE and Ic collector current used for the test; displays Vbe base-emitter voltage and base current used; displays Ic collector leakage current.
The instrument, in analysing MOSFETs, detects whether n- or p-channel, enhancement or depletion mode; identifies gate, drain and source pins; displays Vgs gate-source voltage and drain current used.
With JFETs it detects whether n- or p-channel; identifies gate pin.
The analyser detects whether a device is an SCR or a triac; identifies MT1, MT2 and gate terminals on a triac or gate, anode and cathode for SCR.
ASMPT SOLO placement head
The ASMPT SOLO placement head is designed to support large processor BGAs on the SIPLACE SX...
Neousys POC-900 Series industrial computing platform
The Neousys POC-900 Series is suitable for smart factory, robotics and industrial inspection...
ASMPT SIPLACE V assembly platform
The SIPLACE V assembly platform is designed to handle large and heavy high-performance BGAs,...

