Micron's 16 nanometre NAND technology wins an award

Friday, 16 August, 2013

Micron Technology’s 16-nanometre (nm) NAND process technology has been chosen by Flash Memory Summit as the 2013 Best of Show award winner in the category of Most Innovative Flash Memory Technology.

Micron’s 128 Gb MLC NAND flash memory devices are targeted at consumer SSDs, removable storage (USB drives and flash cards), tablets, ultrathin devices, mobile handsets and data centre cloud storage. They provide the greatest number of bits per square millimetre and the lowest cost of any MLC device in existence. In fact, the new technology could create nearly 6 TB of storage on a single wafer.

“We’re thrilled with this recognition of our latest development in flash technology,” said Glen Hawk, vice president of Micron’s NAND Solutions Group. “Our 16 nm NAND process extends our leadership position in providing the world’s smallest 128 Gb MLC device. This is a very cost-effective, capital-friendly technology that will be ramping this year and into next year.”

Winning products were judged by a panel of industry experts who evaluated each nomination according to the following criteria: distinctiveness of the application, technology or product; central use of flash memory as a solution or innovation; technical and business significance to the general marketplace. For a complete list of all the Flash Memory Summit Best of Show Awards winners, visit www.flashmemorysummit.com.

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