RF Micro Devices awarded navy contract for GaN RF power
RF Micro Devices has been awarded a US$1.5 million R&D contract by the US Office of Naval Research to include the development of materials, device fabrication and high-power circuits, using gallium nitride (GaN) microelectronics.
The contract expands the company's contract backlog over the next six quarters to about $5 million. Since 2004, RFMD has been awarded over $14.5 million in R&D contracts by the US Government for development of its GaN high-power RF technology.
GaN technology is said to offer performance advantages for applications, including radar, mobile communication and electronic warfare.
In addition to military systems, RFMD's GaN RF power technology provides enhanced performance to a growing number of commercial power amplifier applications, including private mobile radio, 3G/LTE wireless infrastructure and CATV transmission networks.
Photonic chip packaging facility opens in Brisbane
Brisbane has opened a facility dedicated to preparing advanced photonic microchips for use in...
Electronex 2027 brings electronics industry to Melbourne
Electronex 2027 will connect electronics professionals, manufacturers and suppliers in Melbourne,...
Global semiconductor market to reach $1.6 trillion in 2026
AI infrastructure and surging memory demand are driving a semiconductor boom, with global revenue...
