SEMIKRON silicon carbide power modules

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SEMIKRON offers full silicon carbide power modules in MiniSKiiP, SEMITOP and SEMITRANS housings, as well as hybrid silicon carbide modules in SEMITRANS and SkiM63/93 packages. SiC MOSFETs enable high output power and power densities to be reached, in combination with high switching frequencies, low losses and good efficiency.

Through the increase in switching frequency, passive filter components can be reduced drastically. Power losses are reduced at the same time, which leads to smaller heat sinks and less cooling effort in general. Both benefits result in a decrease in system cost.

The full silicon carbide power modules are available from 20 to 540 A in 1200 V, with or without an anti-parallel, free-wheeling Schottky diode. The hybrid silicon carbide power modules are available from 8 to 450 A in 1200 V.

Covered topologies are six-packs in the classic configuration but are also available with a split output to enable flexible adaption to the user’s application. Further half bridges and boost converters, including a bypass diode, are available.