UnitedSiC high-performance SiC FET switching transistors

Saturday, 01 June, 2019 | Supplied by: Transfer Multisort Elektronik


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UnitedSiC has released a family of high-performance FET transistors based on a cascode configuration, made with the use of SiC technology. A JFET (SiC) transistor and Si-MOSFET transistor are optimally connected in one housing, which results in an easy-to-apply switching cascode. The product can be successfully used in applications with high operating frequency and demanding thermal conditions, in which it can replace MOSFET or IGBT transistors.

Features include low resistance in switch-on state; operating temperature of up to 175°C; short switch-off time; low gate capacity; reverse voltage of up to 650 V; low internal thermal resistance; and internal ESD protection.

Typical applications include motor drivers; impulse power supplies; power factor correction systems; inductive loads; inverters; and converters for solar panels.

For more information, click here.

Online: www.tme.eu
Phone: 0011 48 42 6455 408
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