The 1200 V SiC (silicon carbide) MOSFETs from ROHM feature good switching performance, low on-resistance and high breakdown voltage, making them suitable in solar inverters, three-phase inverters, DC-DC converters, uninterruptible power supplies (UPSs) and motor drives.
The ROHM SCH2080KE is co-packaged with a discrete anti-parallel SiC Schottky Barrier Diode (SBD) which features forward voltage that is three times smaller than the Intrinsic body diode.
SiC MOSFETs from ROHM are said to offer lower switching loss - as much as 90% compared to silicon devices - due to the absence of tail current and the fast recovery performance of the body diode. The range enables designers to benefit from high efficiency and power density, and low system BOM, for their next-generation power conversion systems.
Phone: 02 9644 7722
Quectel QSM368Z single board computer
The Quectel QSM368Z single board computer is designed to help accelerate intelligent device...
Acromag XMC-ZU module series
The Acromag XMC-ZU series of modules is designed for real-time processing, high-speed data...
Direct Automation BRX OPC UA pluggable communication module
The BRX OPC UA pluggable communication module supports secure data transmission using built-in...
Learn More
I am interested in ROHM SCH2080KE SiC MOSFETs.
Complete the form and a supplier representative will be in touch.
