The 1200 V SiC (silicon carbide) MOSFETs from ROHM feature good switching performance, low on-resistance and high breakdown voltage, making them suitable in solar inverters, three-phase inverters, DC-DC converters, uninterruptible power supplies (UPSs) and motor drives.
The ROHM SCH2080KE is co-packaged with a discrete anti-parallel SiC Schottky Barrier Diode (SBD) which features forward voltage that is three times smaller than the Intrinsic body diode.
SiC MOSFETs from ROHM are said to offer lower switching loss - as much as 90% compared to silicon devices - due to the absence of tail current and the fast recovery performance of the body diode. The range enables designers to benefit from high efficiency and power density, and low system BOM, for their next-generation power conversion systems.
Phone: 02 9644 7722
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