STMicroelectronics 1200 V silicon-carbide diodes

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A full range of 2–40 A 1200 V silicon-carbide (SiC) JBS (junction barrier Schottky) diodes from STMicroelectronics enables a range of applications to benefit from the high switching efficiency, fast recovery and consistent temperature characteristics of SiC technology.

ST’s SiC-diode manufacturing process creates robust devices with good forward voltage (lowest VF), giving circuit designers the freedom to achieve high efficiency using diodes with a low current rating. This makes SiC technology accessible for applications such as solar inverters, industrial motor drives, home appliances and power adapters.

At the same time, performance-oriented applications that demand SiC for high efficiency, low weight, small size or good thermal properties can extend these advantages using the 1200 V SiC diodes. The higher efficiency margin provided by their lower forward voltage drop (VF) delivers benefits for automotive equipment such as onboard battery chargers and charging stations for plug-in hybrid or electric vehicles. Overall robust electrical performance is suitable for telecom and server power supplies, high-power industrial switched-mode power supplies and motor drives, uninterruptible power supplies and large solar inverters. Achieving the lowest VF also helps reduce operating temperature and extend application lifetime.

For more information: www.st.com/sic-diodes-1200v-news.