STMicroelectronics STL320N4LF8 and STL325N4LF8AG MOSFETs

Tuesday, 05 July, 2022 | Supplied by: STMicroelectronics Pty Ltd

STMicroelectronics STL320N4LF8 and STL325N4LF8AG MOSFETs

Cutting both on-resistance and switching loss, while optimising body-diode properties, STMicroelectronics’ 40 V MOSFETs, the STL320N4LF8 and STL325N4LF8AG, are designed to save energy and enable low noise in circuits for power conversion, motor control and power distribution.

The N-channel enhancement-mode MOSFETs leverage STPOWER STripFET F8 oxide-filled trench technology to achieve impressive figures of merit. They feature maximum on-resistance (Rds(on)) of 0.8 and 0.75 mΩ, respectively, at gate-source voltage (VGS) of 10 V. The MOSFETs’ efficient Rds(on) per die area allows a space-saving and thermally efficient PowerFLAT 5x6 package.

STripFET F8 technology also enables good switching speed through low device capacitances that minimise dynamic parameters such as gate-drain charge, boosting the system efficiency. Designers can select switching frequency in the range from 600 kHz to 1 MHz, permitting smaller capacitive and magnetic components to save circuit size and bill of materials, as well as increasing the power density of the final application.

A proper output capacitance and associated equivalent series resistance prevent spikes in the drain-source voltage and enable short dumpling oscillation time at turn-off. With this, and the body diode’s soft recovery characteristic, the MOSFETs should emit low electromagnetic interference (EMI) compared to other similar devices in the market. In addition, the diode has low reverse-recovery charge that minimises energy losses in hard-switching topologies.

The gate threshold voltage (VGS(th)) is tightly controlled to provide a narrow spread across devices and hence facilitate parallel connection of multiple MOSFETs to handle increased current. Short-circuit ruggedness is also provided, withstanding up to 1000 A (pulses shorter than 10 µs).

Suitable for battery-powered products and applications in computing, telecom, lighting and general power conversion, the STL320N4LF8 and STL325N4LF8AG are the first industrial and AEC-Q101 qualified STPOWER STripFET F8 MOSFET devices, respectively.

For more information: www.st.com/f8-stripfet.

Online: www.st.com
Phone: 02 9158 7200
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