Power transistor distributor

Richardson Electronics has signed a global distribution agreement with HVVi Semiconductors of Phoenix, AZ, to distribute its RF power transistors, based on HVVi’s HVVFET architecture.

The company has already announced what it claims is the first major advance in silicon RF power transistor design in more than 15 years. Based on the world’s first high-voltage vertical field effect transistor (HVVFET), this architecture delivers frequency bandwidth, voltage and power levels to radar and avionic applications with improved performance — reducing overall part count and enhancing cost efficiencies.

The company has introduced its first three products based on HVVFET architecture — the HVV1011-300, HVV1214-075 and HVV1214-025. Targeted at high-power, pulsed RF applications in the L-band such as IFF, TCAS, mode-S, TACAN and ground-based radar, the three devices use the inherent benefits of the HVVFET process to deliver high output power and high gain in a compact package. All three transistors are designed to operate at 48 V.