100 W GaN-on-Si power transistor for Wi MAX applications
Nitronex, an innovative developer and manufacturer of high-performance RF power transistors for the commercial and broadband wireless infrastructure markets, has developed a 28 V, 100 W gallium nitride high electron mobility transistor (HEMT), ideal for WiMAX applications. Designed using Nitronex's patented Sigantic NFR1 process, the NPT25100 GaN-on-Si power transistor is designed specifically for 2.3 - 2.7 GHz WiMAX applications. Typical performance is rated using a mobile WiMAX waveform defined as a single carrier OFDM signal 64-QAM ¾, 8 burst, 3.5 MHz channel bandwidth, 10.3 dB PAR @ .01% probability on CCDF. Under these test conditions, the NPT25100 will deliver 14.5 dB of gain (typical), 21% efficiency, and less than 2.5% EVM — all at >10 W of power.
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