Cree RF CGH40006S GaN HEMT transistor

Friday, 06 May, 2011 | Supplied by: Clarke & Severn Electronic Solutions

The Cree RF CGH40006S is claimed to be the first GaN HEMT transistor in a QFN plastic package.

The gallium nitride (GaN) high electron mobility transistor (HEMT) operates from a 28 V rail and offers a general-purpose, broadband solution to a variety of RF and microwave applications.

GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making this device suitable for linear and compressed amplifier circuits.

Online: www.csesolutions.com.au/
Phone: 02 9482 1944

Septentrio mosaic-G5 P6 GNSS module

The mosaic-G5 P6 is designed for commercial UAVs, robots and other size- and power-constrained...

Control Devices APEM PKI Series keypads

The APEM PKI Series of keypads features silicone keys for tactile feedback and high-intensity RGB...

IMP Electronics DT035CTFT IPS LCD module

The DT035CTFT IPS LCD module from IMP Electronics is suitable for industrial, consumer and...

Content from other channels on our network

Siemens expands Queensland manufacturing facility

Customer demand exceeding capacity for Alpha HPA

Curtin University project to research sustainable gallium processing

How to extend the life of your motor bearings

Mars Petcare Wodonga expansion boosts manufacturing output

Australia's EnergyConnect project is almost ready to go live

Funding boost for electric road freight

Siemens and Infineon collaborate on solid-state circuit breakers

Trial supports stranded EV drivers

Renewable energy infrastructure must be built at 'warp speed': report

Securing the new financial year: prioritising autonomous cyber defence

Cohesity develops headless data security architecture

Australia's 'missing middle' AI capabilities

Banking security leaders see AI as the industry's top threat

AI is exposing the real problem in enterprise IT: infrastructure