Cree RF CGH40006S GaN HEMT transistor

Friday, 06 May, 2011 | Supplied by: Clarke & Severn Electronic Solutions

The Cree RF CGH40006S is claimed to be the first GaN HEMT transistor in a QFN plastic package.

The gallium nitride (GaN) high electron mobility transistor (HEMT) operates from a 28 V rail and offers a general-purpose, broadband solution to a variety of RF and microwave applications.

GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making this device suitable for linear and compressed amplifier circuits.

Online: www.csesolutions.com.au/
Phone: 02 9482 1944

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