Cree RF CMPA2735075F power amplifier

The CMPA2735075F from Cree RF is a gallium nitride (GaN) high electron mobility transistor (HEMT)-based monolithic microwave integrated circuit. GaN has superior properties compared with silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity.

GaN HEMTs also offer greater power density and wider bandwidths compared with Si and GaAs transistors.

The MMIC contains a two-stage reactively matched amplifier design approach enabling very wide bandwidths to be achieved, enabling wide bandwidths to be achieved in a small footprint screw-down package.

The device is a two-stage 75 W GaN HEMT MMIC HPA offered in a 50 Ω package. This MMIC delivers 75 W from 2.7-3.5 GHz with efficiency approaching 60% PAE for 25 dB power gain. The device is suitable for civil and military phased array radar applications.