Diodes DFN0606 NPN and PNP transistors

Diodes has introduced the DFN0606-packaged NPN and PNP bipolar transistors. Occupying a board space of 0.36 mm², the transistors are said to be 40% smaller than the DFN1006 (SOT883) parts and deliver the same or better electrical performance. With their off-board height of 0.4 mm, they are suitable for wearable technology such as smartwatches, health and fitness devices, as well as other space-constrained consumer products such as smartphones and tablets.

The company’s initial DFN0606 bipolar transistor offerings are two NPN and PNP devices handling a power dissipation performance as high as 830 mW. The 40 V-rated MMBT3904FZ and MMBT3906FZ boost power density and also provide a 200 mA collector current, while the 45 V-rated BC847BFZ and BC857BFZ provide a collector current of 100 mA. All devices switch on at a base-emitter voltage of less than 1 V, enabling them to be fully turned on under conditions of low portable power.