Diodes has released a complementary pair of 100 V enhancement mode MOSFETs into an SO8 package, claiming to achieve the same performance of much larger individually packaged parts.
The ZXMC10A816 is aimed at H-bridge circuits in DC fan and inverter circuits, Class D amplifier output stages and an array of other 48 V applications.
It enables designers to replace equivalent devices in SOT223 and DPak (TO252) packages, the N- and P-channel MOSFET combination reduces board space and component count and simplifies gate drive circuit layouts.
The SO8 package’s footprint of 31 mm2 is 30% that of two SOT223 MOSFETs.
The MOSFETs used in the dual device package exhibit low gate charge and typical RDS(ON) of 230 and 235 mΩ at VGS of 10 V, ensuring switching and on state losses are minimised. Power dissipation figures are 2.4 and 2.6 W.
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