Freescale LDMOS transistor range

Richardson has announced availability and design support for two new laterally diffused metal oxide semiconductor (LDMOS) transistors from Freescale.

The two RF power FETs feature enhanced ruggedness of 65:1 VSWR and wideband operation over 1 MHz to 2 GHz. The unmatched transistors can deliver full CW rated power over the entire operating frequency range.

The combination of integrated stability enhancements and optimised impedances allow for a simpler wideband implementation than previous generations of LDMOS transistors.

The devices are housed in low thermal resistance packaging and are suitable for applications involving harsh conditions, including HF-UHF transmitters and transceivers, television transmitters, white space data transceivers, aerospace and defence systems, test equipment and radar systems.

Key features of the 25 W MRFE6VS25NR1 include: frequency range: 1.8 to 2000 MHz; gain: 25.4 dB; pout: 25 W; power added efficiency: 74.5%; supply voltage: 50 DC; thermal resistance: 1.2ºC/W; package type: TO-270-2.

Key features of the 100 W MRFE6VP100HR5 include: frequency range: 1.8 to 2000 MHz; gain: 26 dB; pout: 100 W; power added efficiency: 70%; supply voltage: 50 DC; thermal resistance: 0.38ºC/W; package type: NI-780-4; also available in gull wing MRFE6VP100HSR5.