Richardson has announced availability and design support for two new laterally diffused metal oxide semiconductor (LDMOS) transistors from Freescale.
The two RF power FETs feature enhanced ruggedness of 65:1 VSWR and wideband operation over 1 MHz to 2 GHz. The unmatched transistors can deliver full CW rated power over the entire operating frequency range.
The combination of integrated stability enhancements and optimised impedances allow for a simpler wideband implementation than previous generations of LDMOS transistors.
The devices are housed in low thermal resistance packaging and are suitable for applications involving harsh conditions, including HF-UHF transmitters and transceivers, television transmitters, white space data transceivers, aerospace and defence systems, test equipment and radar systems.
Key features of the 25 W MRFE6VS25NR1 include: frequency range: 1.8 to 2000 MHz; gain: 25.4 dB; pout: 25 W; power added efficiency: 74.5%; supply voltage: 50 DC; thermal resistance: 1.2ºC/W; package type: TO-270-2.
Key features of the 100 W MRFE6VP100HR5 include: frequency range: 1.8 to 2000 MHz; gain: 26 dB; pout: 100 W; power added efficiency: 70%; supply voltage: 50 DC; thermal resistance: 0.38ºC/W; package type: NI-780-4; also available in gull wing MRFE6VP100HSR5.
Phone: 02 8883 4670
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